Analysis of Hole Transport in Arbitrarily Strained Germanium
نویسندگان
چکیده
Full-band Monte Carlo simulations are performed to study the properties of hole transport in bulk Germanium under general strain conditions. The band structures are calculated with the empirical non-local pseudopotential method. For Monte Carlo simulations acoustic and optical phonon scattering as well as impact ionization are taken into account. Results for biaxially strained Ge grown on a [001] oriented Si1−xGex substrate and for uniaxial compressive stress in [110] exhibit a high mobility enhancement. These results are compared to experimental and theoretical results from literature.
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تاریخ انتشار 2006